? semiconductor components industries, llc, 2005 july, 2005 ? rev. 4 1 publication order number: bc846bpdw1t1/d bc846bpdw1t1, BC847BPDW1T1 series, bc848cpdw1t1 series dual general purpose transistors npn/pnp duals (complementary) these transistors are designed for general purpose amplifier applications. they are housed in the sot?363/sc?88 which is designed for low power surface mount applications. features ? pb?free packages are available maximum ratings ? npn rating symbol value unit collector-emitter voltage bc846 bc847 bc848 v ceo 65 45 30 v collector-base voltage bc846 bc847 bc848 v cbo 80 50 30 v emitter?base voltage v ebo 6.0 v collector current ? continuous i c 100 madc maximum ratings ? pnp rating symbol value unit collector-emitter voltage bc846 bc847 bc848 v ceo ?65 ?45 ?30 v collector-base voltage bc846 bc847 bc848 v cbo ?80 ?50 ?30 v emitter?base voltage v ebo ?5.0 v collector current ? continuous i c ?100 madc maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit total device dissipation per device fr?5 board (note 1) t a = 25 c derate above 25 c p d 380 250 3.0 mw mw/ c thermal resistance, junction?to?ambient r ja 328 c/w junction and storage temperature t j , t stg ?55 to +150 c 1. fr?5 = 1.0 x 0.75 x 0.062 in. http://onsemi.com sot?363 case 419b style 1 marking diagram q 1 (1) (2) (3) (4) (5) (6) q 2 xx = device code m = date code = pb?free package (note: microdot may be in either location) 1 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. device package shipping ? ordering information bc846bpdw1t1 sot?363 3000 units/reel BC847BPDW1T1 sot?363 3000 units/reel bc847cpdw1t1 sot?363 3000 units/reel bc848cpdw1t1 sot?363 3000 units/reel BC847BPDW1T1g sot?363 (pb?free) 3000 units/reel bb bf bg bl bf mark bc848cpdw1t1g sot?363 (pb?free) 3000 units/reel bl bc846bpdw1t1g sot?363 (pb?free) 3000 units/reel bb xx m 1 6
bc846bpdw1t1, BC847BPDW1T1 series, bc848cpdw1t1 series http://onsemi.com 2 electrical characteristics (npn) (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (i c = 10 ma) bc846 series bc847 series bc848 series v (br)ceo 65 45 30 ? ? ? ? ? ? v collector ?emitter breakdown voltage (i c = 10 a, v eb = 0) bc846 series bc847b only bc848 series v (br)ces 80 50 30 ? ? ? ? ? ? v collector ?base breakdown voltage (i c = 10 a) bc846 series bc847 series bc848 series v (br)cbo 80 50 30 ? ? ? ? ? ? v emitter ?base breakdown voltage (i e = 1.0 a) bc846 series bc847 series bc848 series v (br)ebo 6.0 6.0 5.0 ? ? ? ? ? ? v collector cutoff current (v cb = 30 v) (v cb = 30 v, t a = 150 c) i cbo ? ? ? ? 15 5.0 na a on characteristics dc current gain (i c = 10 a, v ce = 5.0 v) bc846b, bc847b bc847c, bc848c (i c = 2.0 ma, v ce = 5.0 v) bc846b, bc847b bc847c, bc848c h fe ? ? 200 420 150 270 290 520 ? ? 475 800 ? collector ?emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) collector ?emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v ce(sat) ? ? ? ? 0.25 0.6 v base ?emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) base ?emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v be(sat) ? ? 0.7 0.9 ? ? v base ?emitter voltage (i c = 2.0 ma, v ce = 5.0 v) base ?emitter voltage (i c = 10 ma, v ce = 5.0 v) v be(on) 580 ? 660 ? 700 770 mv small?signal characteristics current ?gain ? bandwidth product (i c = 10 ma, v ce = 5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = 10 v, f = 1.0 mhz) c obo ? ? 4.5 pf noise figure (i c = 0.2 ma, v ce = 5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) nf ? ? 10 db
bc846bpdw1t1, BC847BPDW1T1 series, bc848cpdw1t1 series http://onsemi.com 3 electrical characteristics (pnp) (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (i c = ?10 ma) bc846 series bc847 series bc848 series v (br)ceo ?65 ?45 ?30 ? ? ? ? ? ? v collector ?emitter breakdown voltage (i c = ?10 a, v eb = 0) bc846 series bc847 series bc848 series v (br)ces ?80 ?50 ?30 ? ? ? ? ? ? v collector ?base breakdown voltage (i c = ?10 a) bc846 series bc847 series bc848 series v (br)cbo ?80 ?50 ?30 ? ? ? ? ? ? v emitter ?base breakdown voltage (i e = ?1.0 a) bc846 series bc847 series bc848 series v (br)ebo ?5.0 ?5.0 ?5.0 ? ? ? ? ? ? v collector cutoff current (v cb = ?30 v) collector cutoff current (v cb = ?30 v, t a = 150 c) i cbo ? ? ? ? ?15 ?4.0 na a on characteristics dc current gain (i c = ?10 a, v ce = ?5.0 v) bc846b, bc847b bc847c, bc848c (i c = ?2.0 ma, v ce = ?5.0 v) bc846b, bc847b bc847c, bc848c h fe ? ? 200 420 150 270 290 520 ? ? 475 800 ? collector ?emitter saturation voltage (i c = ?10 ma, i b = ?0.5 ma) (i c = ?100 ma, i b = ?5.0 ma) v ce(sat) ? ? ? ? ?0.3 ?0.65 v base ?emitter saturation voltage (i c = ?10 ma, i b = ?0.5 ma) (i c = ?100 ma, i b = ?5.0 ma) v be(sat) ? ? ?0.7 ?0.9 ? ? v base ?emitter on voltage (i c = ?2.0 ma, v ce = ?5.0 v) (i c = ?10 ma, v ce = ?5.0 v) v be(on) ?0.6 ? ? ? ?0.75 ?0.82 v small?signal characteristics current ?gain ? bandwidth product (i c = ?10 ma, v ce = ?5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = ?10 v, f = 1.0 mhz) c ob ? ? 4.5 pf noise figure (i c = ?0.2 ma, v ce = ?5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) nf ? ? 10 db
bc846bpdw1t1, BC847BPDW1T1 series, bc848cpdw1t1 series http://onsemi.com 4 typical npn characteristics ? bc846 figure 1. dc current gain i c , collector current (ma) figure 2. ?on? voltage i c , collector current (ma) 0.8 1.0 0.6 0.2 0.4 1.0 2.0 0.1 1.0 10 100 0.2 0.2 0.5 0.2 1.0 10 200 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 5.0 v h fe , dc current gain (normalized) v, voltage (volts) v ce = 5 v t a = 25 c 0 0.5 2.0 5.0 20 50 100 figure 3. collector saturation region i b , base current (ma) figure 4. base?emitter temperature coefficient i c , collector current (ma) ?1.0 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector?emitter voltage (volts) vb , temperature coefficient (mv/ c) 0.2 2.0 10 200 1.0 t a = 25 c 200 ma 50 ma i c = 10 ma 0.05 0.2 0.5 2.0 5.0 100 ma 20 ma ?1.4 ?1.8 ?2.2 ?2.6 ?3.0 0.5 5.0 20 50 100 ?55 c to 125 c vb for v be figure 5. capacitance v r , reverse voltage (volts) 40 figure 6. current?gain ? bandwidth product i c , collector current (ma) 0.1 0.2 1.0 50 2.0 2.0 10 100 100 200 500 50 20 20 10 6.0 4.0 1.0 10 50 100 5.0 v ce = 5 v t a = 25 c c, capacitance (pf) f, current?gain ? bandwidth product t 0.5 5.0 20 t a = 25 c c ob c ib
bc846bpdw1t1, BC847BPDW1T1 series, bc848cpdw1t1 series http://onsemi.com 5 typical pnp characteristics ? bc846 figure 7. dc current gain i c , collector current (amp) figure 8. ?on? voltage i c , collector current (ma) ?0.8 ?1.0 ?0.6 ?0.2 ?0.4 1.0 2.0 ?0.1 ?1.0 ?10 ?200 ?0.2 0.2 0.5 ?0.2 ?1.0 ?10 ?200 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = ?5.0 v figure 9. collector saturation region i b , base current (ma) figure 10. base?emitter temperature coefficient i c , collector current (ma) ?1.0 ?1.2 ?1.6 ?2.0 ?0.02 ?1.0 ?10 0 ?20 ?0.1 ?0.4 ?0.8 v ce , collector?emitter voltage (volts) vb , temperature coefficient (mv/ c) ?0.2 ?2.0 ?10 ?200 ?1.0 t j = 25 c i c = ?10 ma h fe , dc current gain (normalized) v, voltage (volts) v ce = ?5.0 v t a = 25 c 0 ?0.5 ?2.0 ?5.0 ?20 ?50 ?100 ?0.05 ?0.2 ?0.5 ?2.0 ?5.0 ?100 ma ?20 ma ?1.4 ?1.8 ?2.2 ?2.6 ?3.0 ?0.5 ?5.0 ?20 ?50 ?100 ?55 c to 125 c vb for v be ?2.0 ?5.0 ?20 ?50 ?100 figure 11. capacitance v r , reverse voltage (volts) 40 figure 12. current?gain ? bandwidth product i c , collector current (ma) ?0.1 ?0.2 ?1.0 ?50 2.0 ?2.0 ?10 ?100 100 200 500 50 20 20 10 6.0 4.0 ?1.0 ?10 ?100 v ce = ?5.0 v c, capacitance (pf) f, current?gain ? bandwidth product t ?0.5 ?5.0 ?20 t j = 25 c c ob c ib 8.0 ?50 ma ?200 ma
bc846bpdw1t1, BC847BPDW1T1 series, bc848cpdw1t1 series http://onsemi.com 6 typical npn characteristics ? bc847 series & bc848 series figure 13. normalized dc current gain i c , collector current (madc) 2.0 figure 14. ?saturation? and ?on? voltages i c , collector current (madc) 0.2 0.5 1.0 10 20 50 0.2 100 figure 15. collector saturation region i b , base current (ma) figure 16. base?emitter temperature coefficient i c , collector current (ma) 2.0 5.0 200 0.6 0.7 0.8 0.9 1.0 0.5 0 0.2 0.4 0.1 0.3 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collector?emitter voltage (v) vb , temperature coefficient (mv/ c) 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.5 1.0 10 20 50 2.0 100 70 30 7.0 5.0 3.0 0.7 0.3 0.1 0.2 1.0 10 100 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce = 10 v t a = 25 c ?55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0 figure 17. capacitances v r , reverse voltage (volts) 10 figure 18. current?gain ? bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current?gain ? bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib
bc846bpdw1t1, BC847BPDW1T1 series, bc848cpdw1t1 series http://onsemi.com 7 typical pnp characteristics ? bc847 series & bc848 series figure 19. normalized dc current gain i c , collector current (madc) 2.0 figure 20. ?saturation? and ?on? voltages i c , collector current (madc) ?0.2 0.2 figure 21. collector saturation region i b , base current (ma) figure 22. base?emitter temperature coefficient i c , collector current (ma) ?0.6 ?0.7 ?0.8 ?0.9 ?1.0 ?0.5 0 ?0.2 ?0.4 ?0.1 ?0.3 1.6 1.2 2.0 2.8 2.4 ?1.2 ?1.6 ?2.0 ?0.02 ?1.0 ?10 0 ?20 ?0.1 ?0.4 ?0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collector?emitter voltage (v) vb , temperature coefficient (mv/ c) 1.5 1.0 0.7 0.5 0.3 ?0.2 ?10 ?100 ?1.0 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = ?10 v v ce = ?10 v t a = 25 c ?55 c to +125 c i c = ?100 ma i c = ?20 ma ?0.5 ?1.0 ?2.0 ?5.0 ?10 ?20 ?50 ?100 ?200 ?0.1 ?0.2 ?0.5 ?1.0 ?2.0 ?5.0 ?10 ?20 ?50 ?100 i c = ?200 ma i c = ?50 ma i c = ?10 ma figure 23. capacitances v r , reverse voltage (volts) 10 figure 24. current?gain ? bandwidth product i c , collector current (madc) ?0.4 1.0 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 ?0.5 c, capacitance (pf) f, current?gain ? bandwidth product (mhz) t t a = 25 c c ob c ib ?0.6 ?1.0 ?2.0 ?4.0 ?6.0 ?10 ?20 ?30 ?40 150 ?1.0 ?2.0 ?3.0 ?5.0 ?10 ?20 ?30 ?50 v ce = ?10 v t a = 25 c t a = 25 c 1.0
bc846bpdw1t1, BC847BPDW1T1 series, bc848cpdw1t1 series http://onsemi.com 8 figure 25. thermal response figure 26. active region safe operating area v ce , collector?emitter voltage (v) ?200 ?1.0 i c , collector current (ma) t a = 25 c bonding wire limit thermal limit second breakdown limit 3 ms t j = 25 c ?100 ?50 ?10 ?5.0 ?2.0 ?5.0 ?10 ?30 ?45 ?65 ?100 1 s bc558 bc557 bc556 the safe operating area curves indicate i c ?v ce lim- its of the transistor that must be observed for reliable op- eration. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 26 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 25. at high case or ambient temperatures, thermal limita- tions will reduce the power that can be handled to values less than the limitations imposed by the secondary break- down. t, time (ms) 1.0 r(t), transient thermal 1.0 0 resistance (normalized) 0.1 0.01 0.001 10 100 1.0k 10k 100k d = 0.5 0.2 0.1 0.05 single pulse z ja (t) = r(t) r ja r ja = 328 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) t 1 t 2 p (pk) duty cycle, d = t 1 /t 2 1.0m 0.02 0.01
bc846bpdw1t1, BC847BPDW1T1 series, bc848cpdw1t1 series http://onsemi.com 9 package dimensions sot?363/sc?88 case 419b?02 issue v style 1: pin 1. emitter 2 2. base 2 3. collector 1 4. emitter 1 5. base 1 6. collector 2 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b?01 obsolete, new standard 419b?02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ?e? b 6 pl dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* sc?88/sc70?6/sot?363
bc846bpdw1t1, BC847BPDW1T1 series, bc848cpdw1t1 series http://onsemi.com 10 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, r epresentation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 bc846bpdw1t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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